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IBM and its joint development partners, AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE), announced the first working static random access memory (SRAM) for the 22nm technology node, the world’s first reported working cell built at its 300mm research facility in Albany, NY.
The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2, breaking the previous SRAM scaling barriers.
A nanometer is one one-billionth of a meter or about 80,000 times smaller than the width of a human hair.